FDS6673BZ-F085 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tail.

Application

resistance.
* HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for Power Management .

Description

Features
* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state
* Max rDS(on) = 12mΩ, VGS = -4.5V, .

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